• DocumentCode
    924179
  • Title

    Detection of phosphorus in heavily diffused silicon by He+ backscattering

  • Author

    Allen, C.R. ; Thomas, C.R.

  • Author_Institution
    University of Oxford, Department of Engineering Science, Oxford, UK
  • Volume
    9
  • Issue
    20
  • fYear
    1973
  • Firstpage
    475
  • Lastpage
    477
  • Abstract
    Application of the alpha-backscattering technique has allowed monitoring of the fractions of nonsubstitutional phosphorus in phosphorus-diffused silicon crystals. The nonsubstitutional fraction is found to increase rapidly with depth into the profile. Present sensitivity is estimated at 1015 atoms cm¿2.
  • Keywords
    elemental semiconductors; particle backscattering; phosphorus; semiconductor doping; semiconductor materials testing; silicon; P; Si; alpha backscattering technique; monitoring; particle backscattering; semiconductor doping; semiconductor materials testing; sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730348
  • Filename
    4236300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=924179