Title :
Detection of phosphorus in heavily diffused silicon by He+ backscattering
Author :
Allen, C.R. ; Thomas, C.R.
Author_Institution :
University of Oxford, Department of Engineering Science, Oxford, UK
Abstract :
Application of the alpha-backscattering technique has allowed monitoring of the fractions of nonsubstitutional phosphorus in phosphorus-diffused silicon crystals. The nonsubstitutional fraction is found to increase rapidly with depth into the profile. Present sensitivity is estimated at 1015 atoms cm¿2.
Keywords :
elemental semiconductors; particle backscattering; phosphorus; semiconductor doping; semiconductor materials testing; silicon; P; Si; alpha backscattering technique; monitoring; particle backscattering; semiconductor doping; semiconductor materials testing; sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730348
