DocumentCode :
924227
Title :
Gate flicker noise in MOSFET´s
Author :
Haslett, J.W. ; Kendall, E.J.M.
Volume :
60
Issue :
9
fYear :
1972
Firstpage :
1111
Lastpage :
1112
Abstract :
A simple technique for measuring the gate flicker noise component in MOS field-effect transistors (MOSFET´s) is presented. The method gives an estimate of the ratio of gate to drain flicker noise currents as compared to the ratio for thermal noise. In addition, the degree of correlation between the gate and drain flicker noise components can be obtained.
Keywords :
1f noise; Copper; Electrodes; Fabry-Perot; Frequency; Low-frequency noise; Semiconductor diodes; Soldering; Steel; Wire;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1972.8869
Filename :
1450799
Link To Document :
بازگشت