• DocumentCode
    924315
  • Title

    ZnS sputtered photocells

  • Author

    Murray, Harry

  • Author_Institution
    Laboratoire d´Electronique et d´Automatique UER Sciences et Techniques, Le Havre, France
  • Volume
    9
  • Issue
    21
  • fYear
    1973
  • Firstpage
    491
  • Lastpage
    493
  • Abstract
    Variations in the photovoltage and photocurrent of thin sputtered films of ZnS, sandwiched between sputtered Al electrodes and a thin transparent Au counterelectrode, have been studied as functions of the wavelength of the incident light. Reversal phenomena give evidence for the existence of two opposite photoeffects in these structures: an intrinsic effect across thc bandgap and an extrinsic effect depending on the nature of electrodes. Measurements were performed with a u.v.-photoeffect signal/noise ratio of more than 100 and a threshold discrepancy of less than 2%.
  • Keywords
    photoelectric cells; sputtering; thin film devices; Al; Au; ZnS; electrodes; photoelectric cells; signal/noise ratio; sputtering; thin film devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730362
  • Filename
    4236315