DocumentCode
924315
Title
ZnS sputtered photocells
Author
Murray, Harry
Author_Institution
Laboratoire d´Electronique et d´Automatique UER Sciences et Techniques, Le Havre, France
Volume
9
Issue
21
fYear
1973
Firstpage
491
Lastpage
493
Abstract
Variations in the photovoltage and photocurrent of thin sputtered films of ZnS, sandwiched between sputtered Al electrodes and a thin transparent Au counterelectrode, have been studied as functions of the wavelength of the incident light. Reversal phenomena give evidence for the existence of two opposite photoeffects in these structures: an intrinsic effect across thc bandgap and an extrinsic effect depending on the nature of electrodes. Measurements were performed with a u.v.-photoeffect signal/noise ratio of more than 100 and a threshold discrepancy of less than 2%.
Keywords
photoelectric cells; sputtering; thin film devices; Al; Au; ZnS; electrodes; photoelectric cells; signal/noise ratio; sputtering; thin film devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730362
Filename
4236315
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