Title :
Two-dimensional finite-element analysis of planar dielectric waveguides with embossed isotropic n-type semiconductor material
Author :
Mohsenian, N. ; Delph, T.J. ; Bolle, D.M.
Author_Institution :
Worcester Polytech. Inst., MA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
Propagation characteristics and modal field distributions are obtained for an embossed rectangular waveguide employing isotropic n -type semiconductor material. A finite-element formulation utilising eight-noded quadrilateral elements was used to derive the dispersion spectrum with spurious solutions rigorously eliminated. The canonical model analysed here employs surface plasmons in a doped semiconducting medium as interface guided waves in the near millimetre wave range. Such structures have potential use in the guidance and control of millimetre waves and have applications in the design of planar quasi-optical integrated devices
Keywords :
III-V semiconductors; dielectric waveguides; dielectric-loaded waveguides; finite element analysis; indium antimonide; plasma filled waveguides; rectangular waveguides; surface plasmons; waveguide theory; InSb; canonical model; dielectric waveguides; dispersion spectrum; eight-noded quadrilateral elements; embossed isotropic n-type semiconductor material; finite-element analysis; interface guided waves; modal field distributions; near millimetre wave range; planar quasi-optical integrated devices; planar waveguides; propagation characteristics; rectangular waveguide; surface plasmons; two-dimensional analysis;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H