Title :
DC and microwave performance of a 0.1 mu m gate InAs/In/sub 0.52/Al/sub 0.8/As MODFET
Author :
Yang, D. ; Chen, Y.C. ; Brock, T. ; Bhattacharya, Pallab K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
The authors have measured and analyzed the performance characteristics of 0.1- mu m gate InAs/In/sub 0.52/Al/sub 0.48/ MODFETs grown by molecular beam epitaxy. The transistors are characterized by measured g/sub m/(max)=840 mS/mm, f/sub T/=128 GHz, and a very high current carrying capability, e.g. I/sub dss/=934 mA/mm at V/sub gs/=0.4 V and V/sub ds/=2.7 V. The value of f/sub T/ is estimated from extrapolation of the current gain (H/sub 21/) at a -6 dB/octave rolloff. This is the first report on the microwave characteristics of an InAs-channel MODFET and establishes the superiority of this heterostructure system.<>
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; 0.1 micron; 128 GHz; 840 mS; DC performance; HEMT; InAs-In/sub 0.52/Al/sub 0.8/As; InAs-channel; MODFET; heterostructure system; microwave performance; molecular beam epitaxy; transistors; Epitaxial layers; FETs; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Temperature;
Journal_Title :
Electron Device Letters, IEEE
