• DocumentCode
    924488
  • Title

    Characteristics of Al2O3/TiO2 nanolaminates and AlTiO thin films on Si

  • Author

    Mikhelashvili, V. ; Garshtein, E. ; Eisenstein, G.

  • Author_Institution
    Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    27
  • Issue
    5
  • fYear
    2006
  • fDate
    5/1/2006 12:00:00 AM
  • Firstpage
    344
  • Lastpage
    346
  • Abstract
    This letter reports a metal-insulator-semiconductor structure based on Al2O3/TiO2 nanolaminates and AlTiO films evaporated on an unheated p-Si substrate. The structure exhibits a low hysteresis in the capacitance-voltage characteristics, a larger dielectric constant leading to a quantum mechanically corrected effective oxide thickness of 1.35-2.1 nm, good stability of the electrical characteristics to thermal processes, a large breakdown electric field of 7.5 MV/cm, and a leakage current density below 5×10-7 A/cm2 at an electric field of 2 MV/cm.
  • Keywords
    MIS structures; aluminium compounds; dielectric hysteresis; laminates; leakage currents; nanostructured materials; permittivity; silicon; titanium compounds; 1.34 to 2.1 nm; Al2O3-TiO2-Si; AlTiO; capacitance-voltage characteristics; dielectric constant; hysteresis; metal-insulator-semiconductor structure; nanolaminates; thin films; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric constant; Dielectric substrates; Electric variables; Hysteresis; Lead compounds; Metal-insulator structures; Quantum mechanics; Thermal stability; Chemical and structural properties; electrical characterization; electron beam gun deposition; thin dielectric films;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.873879
  • Filename
    1626452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=924488