DocumentCode :
924498
Title :
P-down ZnSTeSe/ZnSe/GaAs heterostructure photodiodes
Author :
Chen, Wen-Ray ; Meen, Teen-Hang ; Cheng, Yi-Cheng ; Lin, Wen-Jen
Author_Institution :
Dept. of Electron. Eng., Nat. Formosa Univ., Yun-Lin, Taiwan
Volume :
27
Issue :
5
fYear :
2006
fDate :
5/1/2006 12:00:00 AM
Firstpage :
347
Lastpage :
349
Abstract :
High-quality quaternary ZnSTeSe epitaxial layers with uniform carrier concentration of 1×1017 cm-3 were successfully grown on p-GaAs substrates by molecular beam epitaxy. P-down ZnSTeSe/ZnSe/GaAs heterostructure photodiodes were also fabricated. It was found that the maximum quantum efficiency of the fabricated ZnSTeSe photodiodes was around 75% with a large spectral width of 500 nm.
Keywords :
epitaxial layers; gallium arsenide; molecular beam epitaxial growth; photodiodes; sulphur compounds; zinc compounds; 500 nm; ZnSTeSe-ZnSe-GaAs; epitaxial layers; heterostructure photodiodes; molecular beam epitaxy; quantum efficiency; Epitaxial layers; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Photodetectors; Photodiodes; Substrates; Tellurium; Temperature; Zinc compounds; P-down; ZnSTeSe; photodiode;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.873369
Filename :
1626453
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=924498
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