Title :
Memory effect in the current-voltage characteristic of 8-hydroquinoline aluminum salt films
Author :
Tu, Chia-Hsun ; Lai, Yi-Sheng ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
This letter investigated the reproducible bistable resistance switching characteristics of a single-layer organic device based on 8-hydroquinoline aluminum (Alq3) fabricated by spin coating. By controlling the ON-state current through the Alq3 films, it has been possible to achieve various resistance states of the films. In addition, the resistance of the ON-state Alq3 films also affects the threshold current and voltage to switch off the device. The independence of the current-injected direction to erase the ON state implies that the filament theory could elucidate the observed phenomenon. The ratio between low- and high-resistance states can reach five orders of magnitude, which will be a potential material for nonvolatile memory application.
Keywords :
aluminium compounds; electrical resistivity; organic semiconductors; semiconductor storage; spin coating; stability; 8-hydroquinoline aluminum salt film; bistable resistance switching; current-injected direction; current-voltage characteristics; filament theory; memory effect; nonvolatile memory application; on-state current; single-layer organic device; spin coating; threshold current; Aluminum; Coatings; Electrons; Ferroelectric materials; Magnetic materials; Optical devices; Optical polymers; Organic light emitting diodes; Switches; Voltage; Memory device; organic; resistance switch;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.872915
