Title :
Advanced poly-Si TFT with fin-like channels by ELA
Author :
Yin, Huaxiang ; Xianyu, Wenxu ; Cho, Hans ; Zhang, Xiaoxin ; Jung, Jisim ; Kim, Doyoung ; Lim, Hyuck ; Park, Kyungbae ; Kim, Jongman ; Kwon, Jangyeon ; Noguchi, Takashi
Author_Institution :
Nano Devices Lab., Samsung Adv. Inst. of Technol., Kyunggi-Do, South Korea
fDate :
5/1/2006 12:00:00 AM
Abstract :
The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm2/V·s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 106.
Keywords :
laser beam annealing; laser beam effects; polymers; semiconductor growth; thin film transistors; 3D fin-like channels; ELA; TFT; electrical stress; excimer laser annealing; grain growth; laser irradiation; low-temperature polysilicon; silicon stripe; thin-film transistor; Annealing; Crystallization; Displays; Semiconductor films; Silicon compounds; Stress; Substrates; Thin film transistors; Very large scale integration; Voltage; Advanced structure; excimer laser annealing (ELA); fin; poly-Si; thin-film transistors (TFTs); three-dimensional (3-D);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.872901
