DocumentCode :
924553
Title :
Si/SiGe resonant interband tunnel diode with fr0 20.2 GHz and peak current density 218 kA/cm2 for K-band mixed-signal applications
Author :
Chung, Sung-Yong ; Yu, Ronghua ; Jin, Niu ; Park, Si-Young ; Berger, Paul R. ; Thompson, Phillip E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
Volume :
27
Issue :
5
fYear :
2006
fDate :
5/1/2006 12:00:00 AM
Firstpage :
364
Lastpage :
367
Abstract :
This letter presents the room-temperature high-frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency fr0 of 20.2 GHz with a peak current density of 218 kA/cm2, a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3×10-7 Ω·cm2 extracted from RF measurements was achieved by Ni silicidation through a P δ-doped quantum well by rapid thermal sintering at 430°C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process.
Keywords :
Ge-Si alloys; elemental semiconductors; microwave diodes; molecular beam epitaxial growth; resonant tunnelling diodes; silicon; 20.2 GHz; 430 C; K band range; RF high-power mixed-signal applications; Si-SiGe; complementary metal-oxide-semiconductor; heterojunction bipolar transistor process; microwave diodes; microwave oscillators; molecular beam epitaxy; negative resistance devices; quantum wells; rapid thermal sintering; resonant interband tunnel diode; resonant tunneling diodes; semiconductor epitaxial layers; silicidation process; silicon alloys; Conductivity; Current density; Cutoff frequency; Diodes; Germanium silicon alloys; Molecular beam epitaxial growth; Radio frequency; Resonance; Silicidation; Silicon germanium; Microwave diodes; microwave oscillators; negative resistance devices; resonant tunneling diodes; semiconductor epitaxial layers; silicon alloys;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.873379
Filename :
1626458
Link To Document :
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