Title :
4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm2
Author :
Jianhui Zhang ; Alexandrov, P. ; Burke, T. ; Zhao, J.H.
Author_Institution :
United Silicon Carbide Inc., New Brunswick, NJ, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
This letter reports a newly achieved best result on the specific ON-resistance (R/sub SP/spl I.bar/ON/) of power 4H-SiC bipolar junction transistors (BJTs). A 4H-SiC BJT based on a 12-μm drift layer shows a record-low specific-ON resistance of only 2.9 m/spl Omega//spl middot/cm2, with an open-base collector-to-emitter blocking voltage (V/sub ceo/) of 757 V, and a current gain of 18.8. The active area of this 4H-SiC BJT is 0.61 mm2, and it has a fully interdigitated design. This high-performance 4H-SiC BJT conducts up to 5.24 A at a forward voltage drop of V/sub CE/=2.5 V, corresponding to a low R/sub SP-ON/ of 2.9 m/spl Omega//spl middot/cm2 up to J/sub c/=859 A/cm2. This is the lowest specific ON-resistance ever reported for high-power 4H-SiC BJTs.
Keywords :
power bipolar transistors; silicon compounds; 12 micron; 18.8 dB; 2.5 V; 4H-SiC BJT; 757 V; SiC; bipolar junction transistor; power transistors; silicon carbide; Fabrication; Low voltage; Material properties; Photonic band gap; Power transistors; Silicon carbide; Bipolar junction transistors (BJTs); power transistors; silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.873370
