DocumentCode
924595
Title
New thin-film power MOSFETs with a buried oxide double step structure
Author
Duan, Baoxing ; Zhang, Bo ; Li, Zhaoji
Author_Institution
Semicond. Center of Microelectron., Univ. of Electron. Sci. & Technol. of China, Sichuan, China
Volume
27
Issue
5
fYear
2006
fDate
5/1/2006 12:00:00 AM
Firstpage
377
Lastpage
379
Abstract
A new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS). Numerical simulations are performed to demonstrate that higher breakdown voltages are obtained resulting from a higher electric-field peak introduced near the BODS, and higher impurity concentration is depleted due to thin-film SOI than that in the conventional SOI and BOSS structure.
Keywords
buried layers; power MOSFET; semiconductor device breakdown; silicon-on-insulator; thin film transistors; buried oxide double step structure; buried oxide step structure; power MOSFET; silicon-on-insulator; thin film SOI; Board of Directors; Dielectrics; Impurities; Isolation technology; MOSFETs; Numerical simulation; Shape; Silicon on insulator technology; Transistors; Voltage; Breakdown voltage; buried oxide double step (BODS); electric-field peak; silicon-on-insulator (SOI) power MOSFET;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.872904
Filename
1626462
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