Title :
New thin-film power MOSFETs with a buried oxide double step structure
Author :
Duan, Baoxing ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
Semicond. Center of Microelectron., Univ. of Electron. Sci. & Technol. of China, Sichuan, China
fDate :
5/1/2006 12:00:00 AM
Abstract :
A new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS). Numerical simulations are performed to demonstrate that higher breakdown voltages are obtained resulting from a higher electric-field peak introduced near the BODS, and higher impurity concentration is depleted due to thin-film SOI than that in the conventional SOI and BOSS structure.
Keywords :
buried layers; power MOSFET; semiconductor device breakdown; silicon-on-insulator; thin film transistors; buried oxide double step structure; buried oxide step structure; power MOSFET; silicon-on-insulator; thin film SOI; Board of Directors; Dielectrics; Impurities; Isolation technology; MOSFETs; Numerical simulation; Shape; Silicon on insulator technology; Transistors; Voltage; Breakdown voltage; buried oxide double step (BODS); electric-field peak; silicon-on-insulator (SOI) power MOSFET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.872904
