Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide

Author

Wu, W.H. ; Tsui, B.Y. ; Huang, Y.P. ; Hsieh, F.C. ; Chen, M.C. ; Hou, Y.T. ; Jin, Y. ; Tao, H.J. ; Chen, S.C. ; Liang, M.S.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

27

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

399

Lastpage

401

Abstract

A new circuit model of five elements has been proposed for the two-frequency capacitance-voltage (C-V) correction of high-k gate dielectric and ultrathin oxide. This five-element circuit model considered the static and dynamic dielectric losses in a lossy MOS capacitor, the parasitic well/substrate resistance, and the series inductance in the cables and probing system. Each of the circuit elements could be easily extracted from the two-frequency C-V and static current-voltage (I-V) measurements if some criteria are well satisfied. In addition, this model can also be transformed into another two four-element circuit models to simplify the analysis and calculations, depending on the gate leakage current.

Keywords

MOS capacitors; dielectric losses; high-k dielectric thin films; leakage currents; semiconductor device models; MOS capacitor; dielectric losses; five-element circuit model; four-element circuit models; gate leakage current; high-k gate dielectric; static current-voltage measurements; substrate resistance; two-frequency capacitance-voltage correction; ultrathin oxide; Cables; Capacitance-voltage characteristics; Circuits; Current measurement; Dielectric losses; Dielectric measurements; Dielectric substrates; Electrical resistance measurement; Inductance; MOS capacitors; High-; MOS capacitor; two-frequency capacitance–voltage (; ultrathin oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.873423

Filename

1626469