Title :
New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development
Author :
Martens, Koen ; De Jaeger, Brice ; Bonzom, Renaud ; Van Steenbergen, Jan ; Meuris, Marc ; Groeseneken, Guido ; Maes, Herman
Author_Institution :
IMEC, Heverlee, Belgium
fDate :
5/1/2006 12:00:00 AM
Abstract :
A method for extracting parameters of weakly Fermi-level pinned germanium (Ge) capacitors is introduced. This method makes progress toward a more generally valid reliable interface state parameter extraction. Such a general method is needed to evaluate and explain the behavior of Ge MOS capacitors, which show characteristics deviating considerably from silicon. The encountered weak pinning confirmed by the new extraction method explains the degraded Ge nMOSFET performance.
Keywords :
Fermi level; MOS capacitors; MOSFET; electronic density of states; elemental semiconductors; germanium; interface states; semiconductor device breakdown; Fermi-level pinning; Ge; MOS capacitors; MOSFET device; germanium capacitors; interface state density extraction; interface state parameter extraction; Degradation; Frequency; Germanium; Interface states; Isothermal processes; MOS capacitors; MOSFET circuits; Parameter extraction; Silicon; Voltage; Conductance method; Fermi-level pinning; Ge MOSFET; electrical characterization; interface state density extraction;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.873767
