DocumentCode
924704
Title
Read-Type Varactors for Parametric Amplifier Applications
Author
Peterson, Dean F. ; Haddad, George I.
Volume
28
Issue
9
fYear
1980
fDate
9/1/1980 12:00:00 AM
Firstpage
945
Lastpage
951
Abstract
The use of Read-type HI-LO doping profiles in varactors for pararnetric amplifier applications is shown to result in improved performance over conventional structures. Optimal diode doping Ievels layer thicknesses, and pump drive levels are derived which give specified frequency performance while minimizing pump power requirements, minimizing noise, maximizing dynamic range, and reducing amplifier sensitivity to pump power fluctuations. The optimum device design is based on environmental Iimitations such as pump power, circuit losses and impedance Ievels and the unavoidable diode series resistance level. Design examples are given for 10- and 100-GHZ parametric amplifiers.
Keywords
Circuit noise; Diodes; Doping profiles; Dynamic range; Frequency; Noise level; Noise reduction; Power amplifiers; Varactors; Working environment noise;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1980.1130201
Filename
1130201
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