Title :
Improved performance of X-band TRAPATT´s
Author :
Grace, M.I. ; Kroger, Heikki
Abstract :
Silicon TRAPATT diodes have been operated at over 40-percent efficiency in X band. This improved efficiency has been associated with steep doping gradients at the epitaxial layer substrate interface and low parasitic series resistances of the high-performance diodes.
Keywords :
Diodes; Doping; Epitaxial layers; Filters; Frequency; Oscillators; Packaging; Passband; Substrates; Varactors;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8921
