DocumentCode :
924749
Title :
New structures for charge-coupled devices
Author :
Schuermeyer, F.L. ; Young, C.R.
Volume :
60
Issue :
11
fYear :
1972
Firstpage :
1444
Lastpage :
1445
Abstract :
The buried-channel concept in charge-coupled devices (CCD´s) is extended to new CCD structures which have no oxide interfaces. The advantages of such devices for technical applications are presented.
Keywords :
Acoustical engineering; Charge coupled devices; Electrodes; Electron mobility; Leakage current; MOS capacitors; Schottky barriers; Semiconductor device doping; Semiconductor device noise; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1972.8922
Filename :
1450852
Link To Document :
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