Title :
Physical dependencies and modeling of output admittances and gain-voltage relationships in bipolar transistors
Author_Institution :
Motorola Semicond. Prod. Div., Phoenix, Ariz.
Abstract :
Several workers have considered the problem of modeling the Early effect and have arrived at simple empirical expressions. A theoretical investigation of the relevant factors is attempted in order to elucidate the proper physical dependencies. The conclusions are compared with data.
Keywords :
Admittance; Bipolar transistors; Capacitance measurement; Doping; Electric breakdown; Maxwell equations; Semiconductor process modeling; Temperature dependence; Voltage control;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8923
