Title :
Millimeter-wave GaAs Schottky-barrier IMPATT diodes
Author :
Migitaka, M. ; Nakamura, Mitsutoshi ; Saito, Kazuyuki ; Sekine, Keisuke
Abstract :
GaAs Schottky-barrier IMPATT diodes have been made by using liquid-phase GaAs epitaxial wafers. On the diodes, with the heat sink made by copper plating, a maximum power of 725 mW was obtained at 27.48 GHz, and a maximum efficiency of 11.9 percent was obtained at 29.70 GHz.
Keywords :
Blades; Diffraction; Epitaxial layers; Face detection; Gallium arsenide; Heat sinks; Millimeter wave technology; Schottky diodes; Substrates; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8925
