Title :
Optimisation of depletion-mode transistors for an m.o.s. p-channel technology
Author :
Schemmert, W. ; H¿¿fflinger, B.
Author_Institution :
Universitÿt Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
Abstract :
Recent advances in p-channel m.o.s. integrated circuits are the result of using depletion-mode load transistors which provide currents proportional to the square of their threshold voltage. Using ion implantation, limits are set to the maximum obtainable threshold voltage depending on the implantation parameters. Their systematic investigation is reported and the resulting optimum parameters for threshold voltage shifts exceeding 6 V are given.
Keywords :
field effect transistors; integrated circuit production; ion implantation; MOS; depletion mode; field effect transistors; integrated circuit production; ion implantation; optimisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730408
