• DocumentCode
    924836
  • Title

    Ambient-temperature effects in transferred-electron amplifiers

  • Author

    Hobson, G.S.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    9
  • Issue
    24
  • fYear
    1973
  • Firstpage
    559
  • Lastpage
    561
  • Abstract
    The effect of ambient temperature on the gain and centre frequency of transferred-electron reflection amplifiers is reported for devices with n+ or metal-alloy cathode contacts. The dependence of the centre frequency on temperature was much stronger than predicted theoretically, and, contrary to expectation, similar performance was obtained from both types of diode.
  • Keywords
    microwave amplifiers; solid-state microwave devices; transferred electron devices; ambient temperature effect; microwave amplifiers; solid state microwave circuits; transferred electron devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730412
  • Filename
    4236368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=924836