Schottky barrier diodes for solar energy conversion

Several Schottky barrier solar cells were fabricated by evaporation and sputtering of Al ohmic contacts and Cr or AuCr alloy barrier metals on 0.5-10.0 2 Ω ċ cm p-type silicon. Potential efficiencies of 4.8 to 12 percent were observed which would be realized with improved fill factors. Computer studies of the optical problem indicate an output power increase by a factor of four through the use of reduced barrier metal thickness (from 275 to 100 Å) and alloy barrier metals to more effectively transmit solar energy to the Schottky junction.