Title :
I band (8-10 GHz) TRAPATT-diode sources
Author :
Risko, J. ; Thomas, Julian ; Prager, H.J. ; Chang, K.K.N.
Author_Institution :
RCA Corporation, Princeton, USA
Abstract :
The feasibility of a high-pulsed-power I band source using both n-type and p-type TRAPATT diodes has been demonstrated. Deep-diffused n-type diodes have generated more than 100 W in the I band.
Keywords :
avalanche diodes; microwave generation; solid-state microwave devices; transit time devices; 100 W; 8 to 10 GHz; I-band; TRAPATT diode; avalanche diodes; microwave generation; solid state microwave devices; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730422
