Title :
Design of Broad-Band GaAs FET Power Amplifiers
Author :
Rauscher, Christen ; Willing, Harry A.
fDate :
10/1/1980 12:00:00 AM
Abstract :
A direct systematic approach to designing broad-band GaAS FET power amplifiers for optimum large-signal gain performance is described. Assets of this approach include its accuracy in predicting large-signal amplifier performance and its basic simplicity. The implementation of the technique is facilitated by having to measure large-signal device bebavior at only one single frequency. The practicability of the method is demonstrated through comparisons between measured and predicted results.
Keywords :
1f noise; Accuracy; Electrons; Extraterrestrial measurements; FETs; Frequency; Gallium arsenide; MESFETs; Performance gain; Power amplifiers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1980.1130224
