Title :
F.M.-noise measurements on p-type and n-type silicon IMPATT oscillators
Author :
Swartz, G.A. ; Chiang, Y.S. ; Wen, Cheng P. ; Young, Abram
Author_Institution :
RCA, David Sarnoff Research Center, Princeton, USA
Abstract :
F.M.-noise measurements on p-type, step-abrupt n-type and uniformly doped n-type silicon IMPATT-diode oscillators show the correlation between the width of the avalanche zone and f.m. noise. A reduction in the f.m.-noise parameter and an increase in the d.c.-to-r.f.-conversion efficiency have been observed for IMPATT devices with a thinner effective avalanche zone.
Keywords :
IMPATT diodes; microwave oscillators; noise measurement; solid-state microwave devices; FM noise; IMPATT diode oscillators; microwave oscillators; n-Si; p-Si;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730428
