• DocumentCode
    925106
  • Title

    Numerical calculation of the ideal c/v characteristics of nonuniformly doped m.o.s. capacitors

  • Author

    El-Sissi, H. ; Cobbold, Richard S. C.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    9
  • Issue
    25
  • fYear
    1973
  • Firstpage
    594
  • Lastpage
    596
  • Abstract
    A new and highly efficient method for calculating the ideal C/V characteristics of nonuniformly doped m.o.s. capacitors is described. Compared with previously described procedures, this method decreases the computation time by more than an order of magnitude. Results for an ion-implanted Gaussian profile are presented.
  • Keywords
    capacitance; electronics applications of computers; metal-insulator-semiconductor structures; numerical methods; ideal CV characteristics; nonuniformly doped MOS structures; numerical calculation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730440
  • Filename
    4236397
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925106