DocumentCode :
925145
Title :
Practical 2-dimensional bipolar-transistor-analysis algorithm
Author :
Zaluska, E.J. ; Dubock, P.A. ; Kemhadjian, H.A.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
Volume :
9
Issue :
25
fYear :
1973
Firstpage :
599
Lastpage :
600
Abstract :
Extensions to a 2-dimensional bipolar-transistor-modelling algorithm are described. They enable practical high-frequency silicon devices to be analysed in a time appreciably shorter than previously reported schemes. This allows device properties to be economically explored over a wide range of bias currents and voltages.
Keywords :
bipolar transistors; computer aided analysis; electronics applications of computers; semiconductor device models; bipolar transistors; two dimensional analysis algorithm;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730443
Filename :
4236400
Link To Document :
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