• DocumentCode
    925171
  • Title

    Effect of doping profile on avalanche noise of silicon IMPATT diodes

  • Author

    Vollmann, E.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Institut fÿr Technische Elektronik, Mÿnchen, West Germany
  • Volume
    9
  • Issue
    25
  • fYear
    1973
  • Firstpage
    602
  • Lastpage
    603
  • Abstract
    The open-circuit spectral noise-voltage density e2/¿f of silicon IMPATT diodes with different punchthrough factors has been measured. A noise reduction has been obtained for diodes with punchthrough factors > 1. This is in agreement with theoretical curves calculated on the basis of the noise theory of Gummel and Blue.
  • Keywords
    IMPATT diodes; noise; semiconductor doping; Si IMPATT diode; avalanche noise; doping profile effects; punchthrough factors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730445
  • Filename
    4236402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925171