• DocumentCode
    925182
  • Title

    Performance analysis of a bipolar mode FET (BMFET) with normally off characteristics

  • Author

    Caruso, Antonio ; Spirito, Paolo ; Vitale, Gianfranco ; Busatto, Giovanni ; Ferla, Giuseppe ; Musumeci, Salvatore

  • Author_Institution
    Dept. of Electron. Eng., Naples Univ., Italy
  • Volume
    3
  • Issue
    2
  • fYear
    1988
  • fDate
    4/1/1988 12:00:00 AM
  • Firstpage
    157
  • Lastpage
    163
  • Abstract
    The fabrication and characterization of a family of power bipolar-mode junction FETs (BMFETs) are reported. Blocking voltages up to 1000 V or currents up to 18 A (corresponding to 800 A/cm2) have been obtained. The experimental results are used to get an insight into the physics of BMFET operation and to extract the basic design criteria for these structures. The performance of the BMFET is compared with that of the bipolar transistor, showing it to be superior
  • Keywords
    bipolar transistors; field effect transistors; 1000 V; 18 A; BMFET; bipolar mode FET; bipolar transistor; blocking voltages; fabrication; Bipolar transistors; Conductivity; Current density; Epitaxial layers; FETs; Fabrication; JFETs; Merging; Performance analysis; Physics; Voltage;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/63.4345
  • Filename
    4345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925182