• DocumentCode
    925225
  • Title

    GaAsing up cellphones

  • Author

    Goldstein, Harry

  • Volume
    43
  • Issue
    5
  • fYear
    2006
  • fDate
    5/1/2006 12:00:00 AM
  • Firstpage
    15
  • Lastpage
    16
  • Abstract
    A group of researchers from the Texas-based company, Freescale Semiconductor Inc., has fabricated metal oxide semiconductor field-effect transistors (MOSFET) using gallium arsenide and a novel gate dielectric. If the group can overcome some significant manufacturing challenges, this innovation could lead to a cellphone-on-a-chip and instant analog-to-digital conversion. It may even enable chip makers to improve processor speed and performance when transistors on silicon chips can be miniaturized no further.
  • Keywords
    III-V semiconductors; MOSFET; analogue-digital conversion; cellular radio; gallium arsenide; monolithic integrated circuits; Freescale Semiconductor Inc; MOSFET; analog-to-digital conversion; cellphone-on-a-chip; gallium arsenide; gate dielectric; metal oxide semiconductor field-effect transistors; multimedia handsets; Cellular phones; Deuterium; Dielectrics; FETs; Gallium arsenide; Hafnium; MOSFET circuits; Silicon; Telephone sets; Voltage;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.2006.1628500
  • Filename
    1628500