DocumentCode :
925324
Title :
Intermodulation distortion in transferred-electron reflection amplifiers
Author :
Charlton, R. ; Cahit, R.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Volume :
9
Issue :
26
fYear :
1973
Firstpage :
622
Lastpage :
623
Abstract :
Measurements of intermodulation distortion in supercritical transferred-electron reflection amplifiers show that the 3rd-order products are approximately 10 dB larger than expected if the diode had a simple parabolic relationship between its negative conductance and alternating terminal-voltage amplitude.
Keywords :
intermodulation measurement; microwave amplifiers; microwave measurement; solid-state microwave circuits; transferred electron devices; 13 GHz; intermodulation measurement; microwave amplifiers; microwave measurement; transferred electron devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730459
Filename :
4236417
Link To Document :
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