DocumentCode :
925330
Title :
Strain sensitivity of thin-film InSb transistor
Author :
Luo, F.C. ; Epstein, M.
Author_Institution :
Northwestern University, Evanston, Ill.
Volume :
61
Issue :
1
fYear :
1973
Firstpage :
129
Lastpage :
130
Abstract :
A thin-film InSb transistor with well-defined saturation at room temperature exhibits useful strain sensitivities.
Keywords :
Capacitive sensors; Crystallization; Metal-insulator structures; Piezoelectric films; Piezoelectric transducers; Structural beams; Substrates; Temperature sensors; Thin film transistors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1973.8985
Filename :
1450915
Link To Document :
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