DocumentCode
925330
Title
Strain sensitivity of thin-film InSb transistor
Author
Luo, F.C. ; Epstein, M.
Author_Institution
Northwestern University, Evanston, Ill.
Volume
61
Issue
1
fYear
1973
Firstpage
129
Lastpage
130
Abstract
A thin-film InSb transistor with well-defined saturation at room temperature exhibits useful strain sensitivities.
Keywords
Capacitive sensors; Crystallization; Metal-insulator structures; Piezoelectric films; Piezoelectric transducers; Structural beams; Substrates; Temperature sensors; Thin film transistors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1973.8985
Filename
1450915
Link To Document