Title :
Electron velocity in n GaAs at high electric fields
Author :
Houston, P.A. ; Evans, A.G.R.
Author_Institution :
University of Strathclyde, Department of Natural Philosophy, Glasgow, UK
Abstract :
The velocity of electrons in n GaAs has been measured for electric fields in the range 20¿55 kV/cm by the time-of-flight technique. The velocity was found to decrease slowly wlth increasing electric field, and is 8.09×106 cm/s at 55 kV/cm.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; high field effects; 20 to 50 KV/cm; III V semiconductors; carrier mobility; electron velocity; gallium arsenide; high field effects; time of flight technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740263
