DocumentCode
925450
Title
20-GHz Band Monolithic GaAs FET Low-Noise Amplifier
Author
Higashisaka, Asamitsu ; Mizuta, Takayuki
Volume
29
Issue
1
fYear
1981
fDate
1/1/1981 12:00:00 AM
Firstpage
1
Lastpage
6
Abstract
A 20-GHs band monolithic GaAs FET low-noise amplifier has been developed. Design and fabrication were performed by obtaining the transmission properties of the microstrip lines on a semi-insulating GaAs substrate. The developed monolithic amplifier consists of a submicron gate GaAs MESFET and the input and output distributed matching circuits on a semi-insulating GaAs substrate measuring 2.75 mm x 1.45 mm. A noise figure of 6.2dB and an associated gain of 7.5 dB were obtained at 21 GHz without any additional tuning adjustments.
Keywords
Distributed amplifiers; FETs; Fabrication; Gain; Gallium arsenide; Impedance matching; Low-noise amplifiers; MESFET circuits; Microstrip; Noise figure;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1981.1130277
Filename
1130277
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