• DocumentCode
    925506
  • Title

    GaAs-GaAlAs anti-Stokes light convertor

  • Author

    Beneking, H. ; Schul, H. ; Mischel, G. ; Schul, G. ; Gattung, A.

  • Author_Institution
    RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
  • Volume
    10
  • Issue
    16
  • fYear
    1974
  • Firstpage
    346
  • Lastpage
    347
  • Abstract
    A multilayer heterojunction device has been manufactured and used for efficient anti-Stokes light conversion. The device consists of six layers: p GaAs, n GaAs, n GaxAl1¿xAs, p GayAl1¿yAs, p GaxAl1¿xAs and p GaAs, essentially forming a GaAs photodiode coupled with a GaAlAs l.e.d. Avalanche multiplication of photoexcited carriers is used to increase the l.e.d. driving current.
  • Keywords
    III-V semiconductors; convertors; gallium arsenide; light emitting diodes; optoelectronic devices; p-n heterojunctions; photodiodes; avalanche multiplication; convertors; light emitting diodes; optoelectronic devices; p-n heterojunctions; photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740273
  • Filename
    4236436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925506