• DocumentCode
    925588
  • Title

    New theory of internal Q switching in semiconductor lasers

  • Author

    Gr¿¿ndorfer, S. ; Adams, M.J. ; Thomas, B.

  • Author_Institution
    University College, Department of Applied Mathematics & Mathematical Physics, Cardiff, UK
  • Volume
    10
  • Issue
    17
  • fYear
    1974
  • Firstpage
    354
  • Lastpage
    356
  • Abstract
    By considering optical-confinement effects in semiconductor lasers, a new theory is presented of transient phenomena in these devices. It is shown that a partial loss of confinement at high injection levels, when combined with the effects of saturable absorption, can satisfactorily account for Q switching.
  • Keywords
    Q-switching; semiconductor lasers; high injection levels; internal Q-switching; optical confinement effects; partial loss of confinement; saturable absorption; semiconductor lasers; transient phenomena theory;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740281
  • Filename
    4236445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925588