DocumentCode
925635
Title
Monte-Carlo based simulation of surface light emission profiles from AlGaInP light emitting diodes
Author
Kettle, J. ; Perks, R.M.
Author_Institution
Multidisciplinary Nanotechnol. Centre, Swansea Univ., UK
Volume
42
Issue
9
fYear
2006
fDate
4/27/2006 12:00:00 AM
Firstpage
553
Lastpage
555
Abstract
Light emission profiles from AlGaInP LEDs are compared with those obtained via Monte-Carlo simulation and a lossy transmission line model. Results show good agreement for devices with thin current spreading layers. However, for thicker layers, geometric effects dominate the output profile, resulting in discrepancies between experimental data and the transmission line model. The simulation of emission profiles confirms this discrepancy, caused by light escaping from below the p-contact.
Keywords
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; transmission line theory; AlGaInP; LED; Monte-Carlo simulation; light emitting diodes; lossy transmission line model; surface light emission profiles; thin current spreading layers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20060463
Filename
1628547
Link To Document