Title :
High performance deeply-recessed GaN power HEMTs without surface passivation
Author :
Shen, L. ; Chakraborty, A. ; McCarthy, L. ; Fichtenbaum, N. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fDate :
4/27/2006 12:00:00 AM
Abstract :
An improved deeply-recessed GaN-based HEMT was demonstrated and shown to produce high microwave power without SiNx passivation. The introduction of a thick graded AlGaN cap layer decreased the gate leakage current and increased the breakdown voltage. An output power density of 15.2 W/mm with a PAE of 45% at 4 GHz (VDS=70 V) was achieved on a SiC substrate with no SiNx passivation.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; leakage currents; microwave field effect transistors; power HEMT; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 4 GHz; 70 V; GaN-AlGaN; SiC; breakdown voltage; deeply-recessed power HEMT; gate leakage current; high microwave power HEMT; output power density; power added efficiency; thick graded AlGaN cap layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064262
