• DocumentCode
    925705
  • Title

    Computer simulations of the large signal characteristics of supercritical GaAs transferred electron amplifiers

  • Author

    Jeppsson, Bert ; Jeppesen, Palle

  • Author_Institution
    Microwave Institute Foundation, Stockholm, Sweden
  • Volume
    61
  • Issue
    2
  • fYear
    1973
  • Firstpage
    248
  • Lastpage
    249
  • Abstract
    The large signal characteristics of supercritically doped n+-n-n+GaAs transferred electron amplifiers are investigated in computer simulations. Device admittance, reflection gain in a 50-Ω circuit, available net output power, and efficiency are presented as a function of mean-square voltage across the device. Good agreement with published experimental amplifier results [1] is demonstrated.
  • Keywords
    Computer simulation; Electrons; Gallium arsenide; Noise figure; Ohmic contacts; Power amplifiers; Radio frequency; Schottky barriers; Schottky diodes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9018
  • Filename
    1450948
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925705