• DocumentCode
    925720
  • Title

    Current/voltage relations in punchthrough transistors

  • Author

    Ward, P.J. ; Perkins, K.D.

  • Author_Institution
    Plessey Co., Allen Clark Research Centre, Towcester, UK
  • Volume
    10
  • Issue
    18
  • fYear
    1974
  • Firstpage
    374
  • Lastpage
    375
  • Abstract
    Observations of punchthrough in narrow-base (¿0.1 ¿m) n-p-n transistors are reported that do not conform to conventional theory. A general theory of punchthrough current/voltage relations is developed that explains the experimental results.
  • Keywords
    bipolar transistors; electric breakdown; bipolar transistors; current/voltage relations; electric breakdown; n-p-n transistors; punchthrough transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740296
  • Filename
    4236461
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925720