• DocumentCode
    925758
  • Title

    An analytical model for pinchoff voltage evaluation of ion-implanted GaAs MESFETs

  • Author

    Dutt, M.B. ; Nath, Ram ; Kumar, R. ; Sharma, B.L.

  • Author_Institution
    Solid State Phys. Lab., Delhi, India
  • Volume
    36
  • Issue
    4
  • fYear
    1989
  • fDate
    4/1/1989 12:00:00 AM
  • Firstpage
    765
  • Lastpage
    768
  • Abstract
    The authors describe an analytical model for accurate evaluation of pinchoff voltage and channel thickness of ion-implanted GaAs MESFETs (metal-semiconductor field-effect transistors). A method for calculating I-V characteristics is outlined that uses pinchoff voltage and channel thickness and takes into account the effects of capping, backgating and source and drain resistances. Both single- and multiple-implantation cases are discussed
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; I-V characteristics; analytical model; backgating; capping; channel thickness; ion-implanted GaAs MESFETs; multiple-implantation cases; pinchoff voltage evaluation; Analytical models; Buffer layers; Doping; Fabrication; Gallium arsenide; Intrusion detection; Ion implantation; MESFETs; Semiconductor process modeling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.22484
  • Filename
    22484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925758