• DocumentCode
    925784
  • Title

    X-band GaAs double-drift IMPATT devices

  • Author

    Omori, M. ; Rosztoczy, F. ; Hayashi, R.

  • Author_Institution
    Varian Associates, Palo Alto, Calif.
  • Volume
    61
  • Issue
    2
  • fYear
    1973
  • Firstpage
    255
  • Lastpage
    256
  • Abstract
    GaAs double-drift IMPATT devices were fabricated by liquid-phase epitaxial growth of n and p layers on an n+substrate. CW output power of 2.35 W with 16.3-percent efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7-percent efficiency at 10.56 GHz are reported.
  • Keywords
    Capacitance measurement; Doping; Epitaxial growth; Fabrication; Gallium arsenide; Power generation; Schottky diodes; Substrates; Testing; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9025
  • Filename
    1450955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925784