Title :
X-band GaAs double-drift IMPATT devices
Author :
Omori, M. ; Rosztoczy, F. ; Hayashi, R.
Author_Institution :
Varian Associates, Palo Alto, Calif.
Abstract :
GaAs double-drift IMPATT devices were fabricated by liquid-phase epitaxial growth of n and p layers on an n+substrate. CW output power of 2.35 W with 16.3-percent efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7-percent efficiency at 10.56 GHz are reported.
Keywords :
Capacitance measurement; Doping; Epitaxial growth; Fabrication; Gallium arsenide; Power generation; Schottky diodes; Substrates; Testing; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9025
