DocumentCode :
925905
Title :
Integral heat-sink IMPATT diodes fabricated using p+etch stop
Author :
Rhee, C. John ; Saltich, Jack
Author_Institution :
Central Research Laboratories, Phoenix, Ariz.
Volume :
61
Issue :
3
fYear :
1973
fDate :
3/1/1973 12:00:00 AM
Firstpage :
385
Lastpage :
386
Abstract :
The problems in batch fabrication of integral heat-sink IMPATT diodes are greatly simplified through a newly developed preferential etching technique. Devices fabricated utilizing the new technique have thermal resistance (θjc) values of 17-20°C/W for an active area of 2 × 10-4cm2.
Keywords :
Boron; Etching; Fabrication; Heat sinks; Metallization; Scanning electron microscopy; Semiconductor diodes; Silicon; Substrates; Thermal resistance;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1973.9037
Filename :
1450967
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=925905
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