مرکز منطقه ای اطلاع رساني علوم و فناوري - Velocity/field characteristic of Ga<sub>x</sub>In<sub>1-x</sub>Sb calculated by the Monte Carlo method

DocumentCode :

925943

Title :

Velocity/field characteristic of Ga_xIn_1-xSb calculated by the Monte Carlo method

Author :

Salai, K. ; Ikoma, Takashi ; Adachi, Y. ; Yanai, H.

Author_Institution :

University of Tokyo, Institute of Industrial Science, Tokyo, Japan

Volume :

Issue :

fYear :

1974

Firstpage :

402

Lastpage :

403

Abstract :

The velocity/field characteristics of Ga_xIn_1-xSb are calculated by the Monte Carlo method for x = 0.3 to 1.0. The effects of temperature and ionized-impurity scattering are also taken into account. Ga_0.5In_0.5Sb is shown to be the most suitable, material for low-power dissipation transferred-electron devices.

Keywords :

III-V semiconductors; Monte Carlo methods; gallium compounds; high field effects; transferred electron devices; GaxIn1-xSb; III-V semiconductors; Monte Carlo method; gallium compounds; high field effects; transferred electron devices; velocity field characteristic;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19740319

Filename :

4236485

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=925943