• DocumentCode
    925943
  • Title

    Velocity/field characteristic of GaxIn1-xSb calculated by the Monte Carlo method

  • Author

    Salai, K. ; Ikoma, Takashi ; Adachi, Y. ; Yanai, H.

  • Author_Institution
    University of Tokyo, Institute of Industrial Science, Tokyo, Japan
  • Volume
    10
  • Issue
    19
  • fYear
    1974
  • Firstpage
    402
  • Lastpage
    403
  • Abstract
    The velocity/field characteristics of GaxIn1-xSb are calculated by the Monte Carlo method for x = 0.3 to 1.0. The effects of temperature and ionized-impurity scattering are also taken into account. Ga0.5In0.5Sb is shown to be the most suitable, material for low-power dissipation transferred-electron devices.
  • Keywords
    III-V semiconductors; Monte Carlo methods; gallium compounds; high field effects; transferred electron devices; GaxIn1-xSb; III-V semiconductors; Monte Carlo method; gallium compounds; high field effects; transferred electron devices; velocity field characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740319
  • Filename
    4236485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925943