• DocumentCode
    925988
  • Title

    Second breakdown of transistors during inductive turnoff

  • Author

    Krishna, Sanjay ; Hower, P.L.

  • Volume
    61
  • Issue
    3
  • fYear
    1973
  • fDate
    3/1/1973 12:00:00 AM
  • Firstpage
    393
  • Lastpage
    395
  • Abstract
    During turnoff, current is localized to the center of the emitter stripe of a transistor. Depending on the magnitude of reverse base current and device parameters, the current density can reach levels which trigger avalanche injection. A simple model is presented which describes this effect and shows good agreement with measurements.
  • Keywords
    Acoustical engineering; Current density; Electric breakdown; Frequency measurement; Gallium arsenide; Laboratories; Noise measurement; Schottky barriers; Schottky diodes; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9044
  • Filename
    1450974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925988