DocumentCode :
926009
Title :
High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography
Author :
Ray, Sumon K. ; Choi, Tin Lun ; Groom, Kristian M. ; Stevens, Benjamin J. ; Liu, Huiyun ; Hopkinson, Mark ; Hogg, Richard A.
Author_Institution :
Univ. of Sheffield, Sheffield
Volume :
13
Issue :
5
fYear :
2007
Firstpage :
1267
Lastpage :
1272
Abstract :
Quantum dot (QD) superluminescent diodes (SLDs) exhibiting 8 mW and 95 nm full-width at half-maximum centered at 1270 nm are demonstrated with a flat-topped spectral profile. This is achieved using 3 times 2 dots in compositionally modulated wells technique. Furthermore, techniques for realization of high-power SLDs are also demonstrated. A continuous-wave output power of 42 mW is achieved for narrowband devices centered at 1250 nm.
Keywords :
broadband networks; optical tomography; semiconductor diodes; semiconductor lasers; semiconductor quantum dots; broadband networks; high power; narrowband devices; optical coherence tomography; power 8 mW; quantum dot superluminescent diodes; semiconductor lasers; size 1250 nm; size 1270 nm; Gallium arsenide; Indium; Optical attenuators; Optical interferometry; Optical scattering; Power generation; Quantum dots; Superluminescent diodes; Temperature; Tomography; Semiconductor lasers; quantum dot (QD); superluminescent diodes (SLDs);
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2007.902997
Filename :
4346510
Link To Document :
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