Title :
Strongly Index-Coupled Membrane BH-DFB Lasers With Surface Corrugation Grating
Author :
Sakamoto, Shinichi ; Naitoh, Hideyuki ; Ohtake, Mamoru ; Nishimoto, Yoshifumi ; Tamura, Shigeo ; Maruyama, Takeo ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Tokyo Inst. of Technol., Tokyo
Abstract :
We realized strongly index-coupled membrane buried-heterostructure (BH) distributed-feedback (DFB) lasers fabricated by electron-beam lithography, CH4/H2 reactive-ion etching, and regrowth by organometallic vapor-phase epitaxy, using surface corrugation DFB. First, we fabricated narrow stripe membrane BH-DFB lasers with surface corrugation for stable single-mode operation. Under optically pumped room-temperature continuous-wave (RT-CW) operation, a wide stopband width of 68 nm was observed in spite of the narrow stripe width of 0.6 mum. The corresponding index-coupling coefficient of 2950 cm-1 is over two times larger than that of a flat-surface (conventional) membrane BH-DFB laser with a stripe width of 2.0 mum. In addition, we fabricated a short-cavity membrane DFB laser with a surface corrugation structure. A threshold optical pump power of as low as 0.34 mW was realized for a 2.0-mum-wide and 80-mum-long device under RT-CW conditions.
Keywords :
distributed feedback lasers; electron beam lithography; optical pumping; semiconductor lasers; sputter etching; vapour phase epitaxial growth; CH4-H2 - Interface; buried-heterostructure distributed-feedback lasers; electron-beam lithography; index-coupled membrane; optical pumping; organometallic vapor-phase epitaxy; reactive-ion etching; surface corrugation; Biomembranes; Corrugated surfaces; Epitaxial growth; Etching; Gratings; Laser stability; Lithography; Optical pumping; Pump lasers; Surface emitting lasers; 1.55-$mu$m semiconductor laser; CH$_{4}$ /H$_{2}$ reactive-ion etching (RIE); GaInAsP/InP; benzocyclobutene (BCB); distributed-feedback (DFB) laser; membrane laser; organometallic vapor-phase epitaxy (OMVPE) regrowth; strong index coupling;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.904160
