• DocumentCode
    926042
  • Title

    The performance of GaAs field-effect transistors as microwave mixers

  • Author

    Sitch, J.E. ; Robson, P.N.

  • Author_Institution
    University of Sheffield, Sheffield, England
  • Volume
    61
  • Issue
    3
  • fYear
    1973
  • fDate
    3/1/1973 12:00:00 AM
  • Firstpage
    399
  • Lastpage
    400
  • Abstract
    The performance of Schottky barrier gate field-effect transistors (FET´s) as single-ended microwave mixers at 3 GHz is described. An increase in dynamic range of approximately 10 dB over conventional diode mixers is reported although the noise figures of FET miters at present are higher than for diode mixers.
  • Keywords
    Circuits; Cutoff frequency; Dielectrics; FETs; Gallium arsenide; Mixers; Noise figure; Resonator filters; Schottky diodes; Strips;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9050
  • Filename
    1450980
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926042