Title :
Monolithic polycrystalline-silicon pressure transducer
Author_Institution :
General Motors Research Laboratories, Electronics Department, Warren, USA
Abstract :
A monolithic pressure transducer using polycrystalline silicon for both the diaphragm material and an integral piezoresistor has been fabricated. The device can be made with good repeatability and with easily varied diaphragm thickness. Electrical-output linearity is very good over a pressure range of 0¿11 cm Hg for a 2.4 ¿m diaphragm having an area of 0.00136 cm2.
Keywords :
monolithic integrated circuits; piezoelectric devices; pressure transducers; resistors; ion implantation; monolithic integrated circuits; piezoresistor; polycrystalline silicon; pressure transducers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740335
