Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology

Author

Sumitomo, Hiroyuki ; Kajiyama, Satoshi ; Oguri, Hiroyuki ; Sakashita, Takeshi ; Yamamoto, Toru ; Nakao, Kensei ; Domoto, Shinichi ; Ueda, Makoto ; Amano, Hidenori ; Satoyoshi, Hirotada ; Kita, Toshihiro ; Izumi, Shigekazu

Volume

13

Issue

5

fYear

2007

Firstpage

1170

Lastpage

1175

Abstract

Large-scale fabrication processes of high-power single-lateral-mode laser diodes (LDs) have been successfully demonstrated for the first time using 4-inch-wafer process technology. An excellent uniformity of the LD characteristics is obtained over an 88-mm-diameter area of the 4-inch wafer with small deviation, e.g., sigma/ave. = 3.5% (ave. plusmn sigma = 73.5 plusmn 2.6 mA) for the threshold current, and sigma/ave. = 0.12% (658.00 plusmn 0.79 nm) for the peak wavelength. The LDs show stable and kink-free high-power operation over 400 mW even at a high temperature of 75degC with an operation current of 600 mA.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; laser beams; optical fabrication; semiconductor lasers; AlGaInP; current 600 mA; high power characteristics; large scale fabrication; laser diodes; size 4 inch; temperature 75 degC; threshold current; uniform characteristics; wafer process technology; Costs; DVD; Diode lasers; Drives; Fabrication; MOCVD; Optical devices; Optical recording; Power generation; Thermal resistance; AlGaInP; four inch; high power; semiconductor laser;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.903488

Filename

4346520